Self-contained liquid cooled semiconductor packaging

ABSTRACT

A liquid cooled semiconductor package and method for forming a liquid cooled semiconductor package is described. The device includes at least one semiconductor device mounted on a substrate. An impermeable housing is disposed on the substrate with an internal cavity. A liquid coolant is within the internal cavity such that the coolant immerses at least one semiconductor device.

BACKGROUND Technical Field

The present invention generally relates to semiconductor packaging, andmore particularly to self-contained liquid cooled semiconductorpackaging.

Description of the Related Art

Semiconductor devices, such as, e.g., processors and memory devices,generate heat during operation due to resistance in wiring andtransistors. This heat can degrade the performance of the device andpossibly even damage materials of the device chip. Thus, inadequate heatdissipation can be a limiting factor in device performance, especiallyis situations where stacked chips are used. Additionally, active liquidcooling solutions can be complex and difficult to assemble or fix.

SUMMARY

In accordance with an embodiment of the present invention, a liquidcooled semiconductor package is described. The device includes at leastone semiconductor device mounted on a substrate. An impermeable housingis disposed on the substrate with an internal cavity. A liquid coolantis within the internal cavity such that the coolant immerses at leastone semiconductor device.

In accordance with another embodiment of the present invention, a liquidcooled semiconductor package is described. The liquid cooledsemiconductor package includes a first semiconductor device solderedonto on a substrate. A second semiconductor device is soldered onto thefirst semiconductor device on a side opposite to the substrate. Animpermeable housing is disposed on the substrate and including a liquidcoolant and the at least one semiconductor device immersed in thecoolant. A convection structure for directing convective currents of thecoolant is disposed within an internal cavity of the impermeable housingusing openings formed in at least one wall of the convective structuresuch that the convective currents are directed from the firstsemiconductor device and the second semiconductor device around theconvective structure, across a top portion of the impermeable housing,and back towards the first semiconductor device and the secondsemiconductor device through the openings.

In accordance with an embodiment of the present invention, a method forforming a liquid cooled semiconductor package is described. The methodincludes forming a cavity with an impermeable housing and a substrate.The cavity is filled with a liquid coolant. A semiconductor devicemounted on the substrate is immersed in the liquid coolant.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional view showing a semiconductor device beingattached to a substrate, in accordance with an embodiment of the presentinvention;

FIG. 2 is a cross-sectional view showing a semiconductor device attachedto a substrate with an underfill, in accordance with an embodiment ofthe present invention;

FIG. 3 is a cross-sectional view showing a semiconductor device beingattached to a substrate with channels in an underfill, in accordancewith an embodiment of the present invention;

FIG. 4 is a cross-sectional view showing a second semiconductor devicebeing attached to a semiconductor device and substrate combination, inaccordance with an embodiment of the present invention;

FIG. 5 is a top view showing a semiconductor package housing, inaccordance with an embodiment of the present invention;

FIG. 6 is a cross-sectional view of cross section 5-5 of FIG. 4 showinga semiconductor package housing, in accordance with an embodiment of thepresent invention;

FIG. 7A is a cross-sectional view showing two stacked semiconductordevices stacks on a substrate and being lowered into a housing with acavity containing a fluid, in accordance with an embodiment of thepresent invention;

FIG. 7B is a cross-sectional view showing two stacked semiconductordevices stacks on a substrate situation on a substrate in a housing witha cavity to be filled with a fluid, in accordance with an embodiment ofthe present invention.

FIG. 8 is a cross-sectional view showing a semiconductor package havingtwo stacked semiconductor devices in a fluid filled cavity of a housingand a heat sink on the housing, in accordance with an embodiment of thepresent invention;

FIG. 9 is a bottom view showing a housing having convection channels, inaccordance with an embodiment of the present invention;

FIG. 10 is a cross-sectional view from line 10-10 of FIG. 9 showing thehousing having convection channels, in accordance with an embodiment ofthe present invention;

FIG. 11 is a bottom view showing a housing having convection channels,in accordance with an embodiment of the present invention;

FIG. 12 is a cross-sectional view from line 12-12 of FIG. 11 showing thehousing having convection channels, in accordance with an embodiment ofthe present invention;

FIG. 13 is a bottom view showing a housing having convection channels,in accordance with an embodiment of the present invention;

FIG. 14 is a cross-sectional view from line 14-14 of FIG. 13 showing thehousing having convection channels, in accordance with an embodiment ofthe present invention;

FIG. 15 is a cross-sectional view showing a semiconductor package havingtwo stacked semiconductor devices in a fluid filled cavity of a housinghaving convection channels and a heat sink on the housing, in accordancewith an embodiment of the present invention; and

FIG. 16 is a block/flow diagram showing a system/method for forming aself-contained liquid cooled semiconductor package, in accordance withan embodiment of the present invention.

DETAILED DESCRIPTION

According to aspects of the present invention, an embodiment of aself-contained liquid cooled semiconductor packaging is described thatis both efficient at cooling one or more chips in the package, andsimple to assemble and repair. The liquid for cooling the semiconductordevice of the package is entirely contained within a housing.

The housing can be constructed from a single piece of heat conductingmaterial and attached to the chip in a watertight fashion. By invertingthe housing and filling the housing with a heat conducting fluid, thechip can then be flipped on the housing, creating a seal around a rimportion of the housing where the housing contacts a substrate. A chipaffixed to the substrate is, therefore, immersed in the fluid withoutthe need for any ports or piping to circulate fluid.

Indeed, convection within the fluid in the package can be leveraged. Forexample, the housing can form a cavity filled with the fluid such thatthe fluid circulates according to convection created by a temperaturedifference between the chip in the package and a heat sink attached tothe housing. Therefore, the heat from the chip can be transferred to thefluid by convection, and the fluid can transfer the heat to the housingby convection, the housing can transfer the heat to the heat sink byconduction and the heat sink can convectively and radiatively dissipatethe heat to the surrounding environment.

To facilitate with convection, the housing can also include channelingwithin the cavity that directs cool fluid towards the chip, and hotfluid away from the chip. Thus, convection in the fluid can beefficiently managed for more efficient heat dissipation.

Exemplary applications/uses to which the present invention can beapplied include, but are not limited to: packaging for semiconductordevices, such as, e.g., packaging for computer processors, memorydevices, graphical processors, systems-on-chip, among others.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a cross-sectional view of asemiconductor device being attached to a substrate is depicted inaccordance with an embodiment of the present invention.

The semiconductor device 200 can be any device for which packaging isuseful. According to aspects of an embodiment of the present invention,such a device can include, e.g., a central processing unit (CPU), amicroprocessor, a graphical processing unit (GPU), a system-on-chip(SoC), a memory chip, or any other semiconductor device and combinationsthereof. The semiconductor device 200 is operated with electricity andhas internal resistance according to materials of conductive structures.As such, in operation, the semiconductor device 200 will generate heat.The heat generated can affect the materials of the device 200 such thatperformance is degraded or the semiconductor device 200 is damaged, orboth. Thus, cooling the semiconductor structure 200 can improve thereliability and performance of the semiconductor device 200. However,the semiconductor device 200 may not be large enough or designed todirectly support any heat dissipating structure. Moreover, it can bebeneficial to electrically connect the semiconductor device 200 to otherdevices, such as, e.g., other processing devices, memory device, etc.Therefore, the semiconductor device 200 can be attached to a packagesubstrate 100 to facilitate packaging the semiconductor device 200 forapplying heat dissipating structures and other devices.

According to aspects of the present invention, the package substrate 100and the semiconductor device 200 can be formed separately and attachedwith, e.g., soldering. As such, solder balls 210 of the semiconductordevice 200 are brought into contact with corresponding contact pads 102on the substrate 100. The semiconductor device 200 can be brought incontact with the substrate 100 using a suitable technique, such as,e.g., pick-and-place or surface mount technology, among other processes.

The contact pads 102 can include contacts for metallizations that leadto other devices and connects on the substrate 100 or connected to thesubstrate 100. The contact pads 102, while depicted as being in thesubstrate 100, can alternatively be formed on top of a surface of thesubstrate 100. Thus, the contact pads 102 form a set of device contactsto facilitate connecting devices to form circuits and systems.

The package semiconductor 100 can include any suitable substratestructure, e.g., a printed circuit board (PCB), a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, etc. In one example, thesubstrate 100 can include a PCB for connected multiple separate devicestogether. Illustrative examples of materials suitable for the substrate100 can include, but are not limited to, Si, SiGe, SiGeC, SiC andmulti-layers thereof. Although silicon is the predominantly usedsemiconductor material in wafer fabrication, alternative semiconductormaterials can be employed as additional layers, such as, but not limitedto, germanium, gallium arsenide, gallium nitride, silicon germanium,cadmium telluride, zinc selenide, etc.

Referring now to FIG. 2, a cross-sectional view of a semiconductordevice attached to a substrate with an underfill is depicted inaccordance with an embodiment of the present invention.

Once the semiconductor device 200 is attached to the substrate 100, theattachment is held in place via solder balls 210 soldered to contactpads 102. However, solder balls 210 can be fragile and are necessary formaintaining electrical contact with other devices attached through thecontact pads 102 of the substrate 100. Therefore, to prevent damage tothe solder balls 210 and protect and bolster the attachment of thesemiconductor device 200 to the substrate 100, an underfill 220 can beprovided in a gap between the semiconductor device 200 and the substrate100 around the solder balls 210.

The underfill can be formed using an underfill process to flow amaterial into the gap. The underfill process can include, e.g.,providing a melted polymer under heat to an edge of the semiconductordevice, and flowing the melted polymer under the device 200 usingcapillary action. Underfill material can include, e.g., a liquid epoxy.However, other processes and material are contemplated. Because theprocess utilizes capillary action to provide a protective underfill 220to encapsulate the solder balls 210, the underfill 220 can include afluid that is curable. Thus, the fluid can flow into the gap bycapillary action, and when cured, provide a protective encapsulation.

Referring now to FIG. 3, a cross-sectional view of a semiconductordevice being attached to a substrate with channels in an underfill isdepicted in accordance with an embodiment of the present invention.

As discussed above, the semiconductor device 200 can generate heat underoperation due to the flow of electricity through structures having aresistance. The heat generation includes structures such as the solderballs 210. Thus, the solder balls 210, in addition to the semiconductordevice 200, are a source of performance degrading heat. Thus, coolingaround the solder balls 210 can facilitate dissipating the heatgenerated by the solder balls 210 as well as the heat generated by thesemiconductor device 200. However, the underfill 220 may be thermallyinsulative, or at least not sufficiently thermally conductive todissipate heat before the heat causes performance degradation.Therefore, underfill channels 222 can be formed at intervals in theunderfill 220. Therefore, heat can be dissipated from the gap betweenthe semiconductor device 200 and the substrate 100 via channels formedby the underfill channels 222, once the gap is filled with liquid asproposed.

Referring now to FIG. 4, a cross-sectional view of a secondsemiconductor device being attached to a semiconductor device andsubstrate combination is depicted in accordance with an embodiment ofthe present invention.

According to aspects of the present invention, a second semiconductordevice 201 can be attached to the semiconductor package 10. Substrate100 real-estate can be optimized by stacking semiconductor devices 200and 201 together, rather than side-by-side. While, attaching the secondsemiconductor device 201 directly to the substrate 100 is possible,real-estate can be conserved by attaching the second semiconductordevice 201 to the semiconductor 200, thereby stacking the devices 201and 200 vertically.

Therefore, second solder balls 211 are brought into contact with devicecontact pads 202 on a top surface of the semiconductor device 200 toattach the second semiconductor device 201 to the semiconductor device200 via the second solder balls 211 and device contact pads 202. Thesemiconductor device 200 can, therefore, include metallizations forcommunicating with the second semiconductor device 201 and for providingpassthroughs to electrically connect the second semiconductor device 201to the substrate 100. Similar to the contact pads 102 on the substrate,the contact pads 202 can form contacts for both the semiconductor device200 for communicating with other semiconductor devices such as thesecond semiconductor device 201. The contact pads 202 can similarly formmetallizations that facilitate connecting the second semiconductordevice 201 with the substrate 100 via the solder balls 210 and thecontact pads 102. Therefore, the second semiconductor device 201 canalso communicate with other devices connected to the substrate 100despite being mounted on the semiconductor device 200.

As many semiconductor devices as desired can be stacked in this fashion.Accordingly space on the substrate 100 is conserved, facilitatingsmaller package sizes.

Referring now to FIG. 5, a top view of a semiconductor package housingis depicted in accordance with an embodiment of the present invention.

According to aspects of the present invention, a housing 300 forsemiconductor packages, such as semiconductor package 10 is formed. Thehousing 300 will cover the semiconductor device 200 or devices 200 and201 on the substrate 100 to protect the device 200 or devices 200 and201 as well as facilitate heat dissipation. Accordingly, the housing 300can include any suitable material for conducting heat from an interiorto an exterior. For example, the housing 300, can include, e.g., a metalor metal alloy such as copper (Cu) and alloys thereof.

The housing 300 can be square in footprint, as seen in the top down viewof FIG. 5. However, other footprints are contemplated such that thehousing 300 can completely encompasses the device 200 or devices 200 and201 attached to the substrate 100.

Referring now to FIG. 6, a cross-sectional view of cross section 6-6 ofFIG. 5 of a semiconductor package housing is depicted in accordance withan embodiment of the present invention.

Regardless of the shape of the footprint of the housing 300, thecross-section of the housing 300 includes an interior cavity 310 foraccommodating the devices 200 and 201. The interior cavity 310 is sizedto accommodate any number of semiconductor devices, either in stackedconfiguration or side-by-side. According to aspects of the presentinvention, the housing 300 includes an interior cavity 310 sized toaccommodate the semiconductor device 200 and the second semiconductordevice 201 in a stacked configuration. Thus, the cross-section of thehousing 300 can be rectangular in shape. However, other shapes arepossible, such as, e.g., square, cylindrical, triangular, tetrahedral,etc.

In the embodiment as depicted, according to aspects of the presentinvention, the housing 300 includes a top portion 302 with sidewalls 304extending transverse to the housing 300. The sidewalls 304 are formedaround the perimeter of the top portion 302 to enclose the interiorcavity 310. At a bottom of each sidewall 304 is a rim 306 having a shapecorresponding to a shape of the top portion 302. Moreover, the rim 306can be contoured such that it corresponds to any contours on thesubstrate 100. For example, the substrate 100 can have a planar surfaceand the housing 300 can have a corresponding flat rim 306 for restingflush against the planar surface of the substrate 100.

The housing 300 can be formed by a suitable technique for creating theinterior cavity 310. For example, the housing 300 can be, e.g., stampedfrom a piece of flat material, cast, welded from multiple materials,3-dimensionally printed, among other techniques. The housing 300 caninclude a size selected to accommodate one or more semiconductordevices. Therefore, the housing 300 can be, e.g., a square, rectangle,circle, etc. in footprint having a size on the order of centimeters.

Referring now to FIG. 7A, a cross-sectional view of two stackedsemiconductor devices stacks on a substrate and being lowered into ahousing with a cavity containing a fluid is depicted in accordance withan embodiment of the present invention.

To form the semiconductor package 10 with self-contained liquid cooling,the housing 300 can be inverted and the interior cavity 310 filled witha coolant 312 in liquid state. Fluids can be more effective attransporting heat from a high temperature area to a low temperature areathan air or other gasses. However, some fluids contain electrolytes thatmake the fluid conductive and could short circuit or otherwise impairthe semiconductor devices 200 and 201. Therefore, the semiconductorpackage 10 can include a fluid that will transport heat away from thehigh temperatures generated at the semiconductor devices 200 and 201 tothe top portion 302 and sidewalls 304 of the housing 300, while alsobeing electrically insulative to avoid interfering with electricalcommunications. Thus, the coolant 312 can include a liquid such as,e.g., alcohol, polymer liquid, or other heat conducting dielectricliquid.

Once the interior cavity 310 of the housing 300 is filled with coolant312, the substrate 100 with the semiconductor devices 200 and 201 can bebrought into contact with the housing 300 such that the semiconductordevices 200 and 201 are inserted into the interior cavity 310 and thecoolant 312 therein, and the rim 306 interfaces with the substrate 100.The rim 306 can include an adhesive to attached the housing 300, via therim 306, to the substrate 300. Any suitable impermeable adhesive may beused such that the interface between the rim 306 and the substrate 100is impermeable to the coolant 312, thus preventing leaks. Thus, thesemiconductor devices 200 and 201 will be entirely contained within afluid filled cavity 310 of the housing 300.

Referring now to FIG. 7B, a cross-sectional view of two stackedsemiconductor devices stacks on a substrate situation on a substrate ina housing with a cavity to be filled with a fluid is depicted inaccordance with an embodiment of the present invention.

Another possible embodiment according to aspects of the presentinvention includes attaching the housing 300 to the substrate 100 priorto filling the internal cavity 310 with fluid. A hole 110 is drilledinto the substrate 100. The coolant 312 can be injected into theinternal cavity 310 via, e.g., a pump or syringe or other liquidintroduction device. Upon filling the internal cavity 310, the hole canbe patched with, e.g., a dielectric material or adhesive. Additionally,the housing 300 can also include a hole 310. The hole 310 can be used inconjunction with, or instead of, the hole 110 for introducing thecoolant 312 into the internal cavity 310. For example, coolant 312 canbe injected into the internal cavity 310 through hole 110, while avacuum is created via hole 310, or vice versa, to facilitate theintroduction of coolant 312 into the internal cavity 310. Similar tohole 110, hole 310 can then be plugged with, e.g., a dielectric materialor other leak-tight material, such as a polymer, metal or rubber.

Referring now to FIG. 8, a cross-sectional view of a semiconductorpackage having two stacked semiconductor devices in a fluid filledcavity of a housing and a heat sink on the housing is depicted inaccordance with an embodiment of the present invention.

According to aspects of the present invention, the semiconductor package10 includes the package substrate 100, two stacked semiconductor devices200 and 201 formed on the package substrate 100, and a housing 300encapsulating the two semiconductor devices 200 and 201 in an internalcavity 310. The two semiconductor devices 200 and 201 are, therefore,fully immersed in a single-state coolant 312 within the internal cavity310. As discussed above, the housing 300 can be attached to the packagesubstrate 100 with an adhesive on the rim 306. However, other attachmentmethods are contemplated, such as, e.g., screws or clamps, and gasketsor seals formed on the rim 306.

Thus, the semiconductor package 10 provides a passive cooling systemwith no fluid inlets, outlets or complicated mechanisms for circulatingfluid. Rather, natural convection of the coolant 312 transports heatgenerated by semiconductor devices 200 and 201 to the housing 300.Because the underfill 220 and 221 include underfill channels 222 and223, respectively, the coolant 312 can contact the semiconductor devices200 and 200 on all sides. Thus, the surface area of the semiconductordevices 200 and 201 are maximized for more efficient heat transfer tothe coolant 312. The coolant 312 can then circulate to lower temperatureareas in the internal cavity 310 due to convective action 500, thuscarrying the heat away from the semiconductor devices 200 and 201 and tothe housing 300.

A heat sink 400 can be included on the housing 300 for dissipating heatto the surrounding environment. Because the housing 300 is formed of aheat conductive material, such as, e.g., Cu, the heat from the coolant312 can be efficiently transferred to the heat sink 400. The heat sink400 can include a fin structure to increase the surface of the heat sink400 such that the heat from the housing 300 can be quickly dissipated tothe environment. Because the heat sink 400 has this large surface area,heat will be effectively transported away from the housing 300,maintaining a low temperature of the housing 300.

Because the housing 300 temperature is low, the convective action 500can be perpetuated with a substantially constant temperature differencebetween the semiconductor devices 200 and 201, and the housing 300.Thus, the semiconductor package 10 is a self-contained andself-regulating passive cooling system that leverages the convectiveaction 500 of a liquid due to the temperature difference between thesemiconductor devices 200 and 201, and the housing 300. Therefore, thesemiconductor package 10 can be cheaply made with fewer failure pointsdue to the elimination of active mechanisms for cooling thesemiconductor devices 200 and 201. Furthermore, because of the simplenature of the semiconductor package 10, any repairs would be cheap andeasy to perform.

The heat sink 400 can be formed on the top portion 302 of the housing300, the one or more of the sidewalls 304, or on all surfaces of thehousing 300, or any combination thereof. The heat sink 304 can includeany material that is suitable for transporting heat from the housing 300to the surrounding environment. Accordingly, the heat sink 400 caninclude, e.g., metals such as, e.g., Cu, among other suitable thermallyconductive materials.

The heat sink 400 can be formed on the housing 300 by any suitableprocess for facilitating heat conduction, such as, e.g., attaching theheat sink 400 using a thermally conductive adhesive, welding, integrallyforming the heat sink 400 with the housing 300, or by mechanicalclamping via, e.g., clamps, screws, etc.

Referring now to FIG. 9, a bottom view of a housing having convectionchannels is depicted in accordance with an embodiment of the presentinvention.

According to aspects of the present invention, the housing 300 caninclude a convection structure 320. The convection structure 320 isincluded within the internal cavity 310 of the housing 300 and designedto direct convective currents of the coolant 312. As such, theconvection structure 320 can include multiple bottom holes 325 fordirecting cool fluid from the housing towards the semiconductor device200 or devices 200 and 201.

The convection structure 320 can formed within the internal cavity 310of the housing 300 by contacting the housing 300 on an interior side oftwo of the sidewalls 304. The convection structure 320 can, therefore,be either attached as a separate piece from the housing 300, or beintegrally formed with the housing 300. If the convection structure 320is separate from the housing, it can be attached using, e.g., anadhesive, a mechanical fastener, welding, or other suitable attachmentmeans. Alternatively, the convection structure 320 can be integrallyformed with the housing 300 via, e.g., a molding process, 3 dimensionalprinting, or other suitable process.

Referring now to FIG. 10, a cross-sectional view from line 10-10 of FIG.9 the housing of having convection channels is depicted in accordancewith an embodiment of the present invention.

The convection structure 320 can be formed with a spaced relationshipfrom the top portion 302 of the housing 300. Accordingly, fluid can flowbetween a top of the convection structure 320 and the top portion 302.Because the housing 300, including the top portion 302, will berelatively low in temperature, the fluid will tend to flow towards thewarmer opposite side of the housing 300, where the semiconductor devices200 and 201 are located (as discussed below). Thus, a top hole 326 ispresent to permit the fluid to flow through the convection structure 320and through the bottom holes 325 and towards a device.

Any number of top holes 326 and bottom holes 325 can be used to assistconvection. However, in one embodiment, two rows of circular bottomholes 325 are present and one row of circular top holes 326.Alternatively, the top holes 326 and bottom holes 325 can take the formof slits that extend from one sidewall 304 to the opposite sidewall 304along the convection structure 320. Other arrangements are alsocontemplated, as well as combinations of arrangements.

Referring now to FIG. 11, a bottom view of a housing having convectionchannels is depicted in accordance with an embodiment of the presentinvention.

According to aspects of the present invention, the housing 300 caninclude a convection structure 330. The convection structure 330 iscontained within the internal cavity 310 of the housing 300 and designedto direct convective currents of the coolant 312. As such, theconvection structure 330 can include multiple bottom holes 335 fordirecting cool fluid from the housing towards the semiconductor device200 or devices 200 and 201.

The convection structure 330 can formed within the internal cavity 310of the housing 300 by contacting the housing 300 on an interior side ofeach of the sidewalls 304. The convection structure 330 can, therefore,be either attached as a separate piece from the housing 300, or beintegrally formed with the housing 300. If the convection structure 330is separate from the housing, it can be attached using, e.g., anadhesive, a mechanical fastener, welding, or other suitable attachmentmeans. Alternatively, the convection structure 330 can be integrallyformed with the housing 300 via, e.g., a molding process, 3 dimensionalprinting, or other suitable process.

Referring now to FIG. 12, a cross-sectional view from line 12-12 of FIG.11 the housing of having convection channels is depicted in accordancewith an embodiment of the present invention.

The convection structure 330 can be formed with a spaced relationshipfrom the top portion 302 of the housing 300. Accordingly, fluid can flowbetween a top of the convection structure 330 and the top portion 302.Because the housing 300, including the top portion 302, will berelatively low in temperature, the fluid will tend to flow towards thewarmer opposite side of the housing 300, where the semiconductor devices200 and 201 are located (as discussed below). Thus, top holes 336 ispresent to permit the fluid to flow through the convection structure 330and through the bottom holes 335 and towards a device.

Any number of top holes 336 and bottom holes 335 can be used to assistconvection. However, in one embodiment, a grid of circular bottom holes335 are present and a grid of circular top holes 336 are horizontallyspaced between each of the circular bottom holes 335. Alternatively, thetop holes 336 and bottom holes 335 can take the form of slits thatextend from one sidewall 304 to the opposite sidewall 304 along theconvection structure 330. Other arrangements are also contemplated, aswell as combinations of arrangements.

Referring now to FIG. 13, a bottom view of a housing having convectionchannels is depicted in accordance with an embodiment of the presentinvention.

According to aspects of the present invention, the housing 300 caninclude a convection structure 340. The convection structure 340 iscontained within the internal cavity 310 of the housing 300 and designedto direct convective currents of the coolant 312. As such, theconvection structure 340 can include multiple bottom holes 345 fordirecting cool fluid from the housing towards the semiconductor device200 or devices 200 and 201.

The convection structure 340 can formed within the internal cavity 310of the housing 300 by mounting the convection structure 340 from thehousing 300 on an interior side of the top portion 302. The convectionstructure 340 can, therefore, be either attached as a separate piecefrom the housing 300, or be integrally formed with the housing 300. Ifthe convection structure 340 is separate from the housing, it can beattached using, e.g., an adhesive, a mechanical fastener, welding, orother suitable attachment means. Alternatively, the convection structure340 can be integrally formed with the housing 300 via, e.g., a moldingprocess, 3 dimensional printing, or other suitable process.

Referring now to FIG. 14, a cross-sectional view from line 14-14 of FIG.13 of the housing having convection channels is depicted in accordancewith an embodiment of the present invention.

The convection structure 340 can be formed with a spaced relationshipfrom the top portion 302 of the housing 300. Accordingly, fluid can flowbetween a top of the convection structure 340 and the top portion 302.The spaced relationship with the top portion 302 is maintained withposts 341 that attached the convection structure 340 to the top portion302. The posts 341 can be, e.g., integrally formed with the convectionstructure 340 and are configured to permit fluid to flow between theconvection structure 340 and the top portion 302 of the housing 300.

Because the housing 300, including the top portion 302, will berelatively low in temperature, the fluid will tend to flow towards thewarmer opposite side of the housing 300, where the semiconductor devices200 and 201 are located (as discussed below). Thus, top holes 346 ispresent to permit the fluid to flow through the convection structure 340and through the bottom holes 345 and towards a device.

Any number of top holes 346 and bottom holes 345 can be used to assistconvection. However, in one embodiment, a grid of four circular bottomholes 345 are present and central circular top hole 346 is horizontallylocated at a center between the circular bottom holes 345.Alternatively, the top holes 346 and bottom holes 345 can take the formof slits that extend from one side of the convection structure 340 toanother, or as radial or circular slits. Other arrangements are alsocontemplated, as well as combinations of arrangements.

Referring now to FIG. 15, a cross-sectional view of a semiconductorpackage having two stacked semiconductor devices in a fluid filledcavity of a housing having convection channels and a heat sink on thehousing is depicted in accordance with an embodiment of the presentinvention.

According to aspects of the present invention, a semiconductor package20 includes a substrate 100, housing 300, heat sink 400 andsemiconductor device 200 or devices 200 and 201 similar to thesemiconductor device 10 of FIG. 8. Here, however, the housing 300includes a convection structure 320. According to an embodiment of thepresent invention, the convection structure 320 is support by two of thesidewalls 304 of the housing 300, as discussed above. The convectionstructure 320 includes a centrally located top hole 326 and twolaterally spaced bottom holes 325 such that, with respect to ahorizontal axis, the top hole 326 is between the two bottom holes 325.Thus, the convection structure 320 can direct the flow of convectivecurrents 600.

Coolant 312 will be heated by the semiconductor devices 200 and 201, asdescribed above. The coolant 312 circulates due to convective actiontowards an area of lower temperature, such as the heat sink 400 locatedon the top portion 302 of the housing 300. Thus, the coolant 312 willfollow a generally upward current from the semiconductor devices 200 and201, around the convection structure 320, to the top portion 302. As thecoolant 312 cools due to contact with the relatively lower temperaturetop portion 302, the coolant 312 follows a current towards the center ofthe top portion 302 where cool coolant 312 drains downwards through thetop hole 326. Thus, the coolant 312 flows along the top portion 302,continually cooling until the coolant 312 reaches the top hole 326. Thecoolant 312 is drawn downwards through the top hole 326 due to displacedfluid of the resulting from the convective current 600.

The convection structure 320 splits the convection current 600 into atleast two portions to exit at least two bottom holes 325. Therefore, theconvection structure 320 diffuses the cool coolant 312 from the topportion 302, directing it downwards toward the semiconductor devices 200and 201. Thus, cool coolant 312 comes into contact with thesemiconductor devices 200 and 201 in a uniformly distributed fashion tomore uniformly absorb heat from the semiconductor devices 200 and 201,thereby increasing the efficiency of convection in the self-containedsemiconductor package 20.

Referring now to FIG. 16, a block/flow diagram of a system/method forforming a self-contained liquid cooled semiconductor package is depictedin accordance with an embodiment of the present invention.

At block 1601, form an impermeable housing with an internal cavity.

The housing can be formed of a heat conducting material to transfer thetemperature of the contents of the internal cavity to an outsideenvironment. Accordingly, the housing can be formed of, e.g., a metalsuch as Cu. Additionally, the housing can be formed using a suitablemethod for shaping the heating conducting material, such as, e.g., 3dimensional printing, molding, casting, welding, etc.

At block 1602, solder a semiconductor device to a substrate.

The semiconductor device can include contacts having solder balls. Thesolder balls can be melted against corresponding pads on the substrateto provide an electrical connection between the substrate and thesemiconductor device, as well as attaching the semiconductor device tothe substrate.

At block 1603, form an underfill in a gap between the semiconductordevice and the substrate.

The underfill can be, e.g., a melted polymer that is flowed between thesemiconductor device and the substrate and around the solder. Thus, theunderfill provides physical and electrical protection to thesemiconductor device and connections with the substrate. Therefore, thesemiconductor package can be robust against physical and electricalshocks.

At block 1604, fill the impermeable housing with a liquid coolant.

At block 1605, immerse the semiconductor device in the liquid coolant.

Immersing the semiconductor device in the liquid coolant can include,e.g., first filling the internal cavity with the coolant and loweringthe substrate towards an open side of the housing such that thesemiconductor device is descended into the coolant contained therein.However, the semiconductor device can alternatively be immersed by,e.g., bringing the substrate into contact with the open side of thehousing such that the semiconductor device is within the internalcavity. Then, a hole in the substrate or the housing can be used to,e.g., inject or pump the coolant into the internal cavity, therebyimmersing the semiconductor device therein. Upon filling the internalcavity with coolant, the hole can be plugged or patched.

At block 1606, fix the impermeable housing to the substrate.

The impermeable housing can be fixed to the substrate in a suitableleak-tight manner. For example, the impermeable housing can be fixed tothe substrate with an impermeable adhesive such as, e.g., an epoxy or aresin. Alternatively, the impermeable housing can be fixed to thesubstrate with, e.g., a clamp, bolt, screw, or other mechanicalfastener. The mechanical fastener can be combined with a gasket or sealaround a rim of the impermeable housing at an interface with thesubstrate to provide improved impermeability.

Having described preferred embodiments of a system and method for aself-contained liquid cooled semiconductor package (which are intendedto be illustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

What is claimed is:
 1. A liquid cooled semiconductor package comprising:at least one semiconductor device on a substrate; an impermeable housingwith an internal cavity positioned around the at least one semiconductordevice, wherein the impermeable housing is affixed to the substrate: aliquid coolant within the internal cavity such that the liquid coolantimmerses the at least one semiconductor device; and at least oneconvection structure extending inwardly from at least one interiorsurface of the impermeable housing, wherein the convection structureincludes a first wall and a second wall opposite the first wall andseparated from the first wall by a distance, wherein the first wall andthe second wall each have one or more holes configured to direct theflow of liquid coolant within the impermeable housing, wherein the atleast one semiconductor device is disposed outside the convectionstructure.
 2. The semiconductor package as recited in claim 1, whereinthe convection structure is supported by two sidewalls of theimpermeable housing.
 3. The semiconductor package as recited in claim 1,wherein the convection structure is integrally formed within theimpermeable housing.
 4. The semiconductor package as recited in claim 1,further including a heat sink disposed on at least one exterior surfaceof the impermeable housing.
 5. The semiconductor package as recited inclaim 1, wherein the at least one semiconductor device includes: a firstsemiconductor device having a first side mounted to the substrate; and asecond semiconductor device mounted to a second side of the firstsemiconductor device opposite to the first side.
 6. The semiconductorpackage as recited in claim 5, further comprising: an underfill betweenthe first semiconductor device and the second semiconductor device. 7.The semiconductor package as recited in claim 1, wherein thesemiconductor package is a self-contained and self-regulating passivecooling system devoid of fluid inlets, fluid outlets and mechanisms forcirculating fluid.
 8. The semiconductor package as recited in claim 1,wherein the at least one semiconductor device is soldered to thesubstrate using solder ball contacts.
 9. The semiconductor package asrecited in claim 1, further including an underfill in a gap between theat least one semiconductor device and the substrate.
 10. Thesemiconductor package as recited in claim 9, wherein the underfillincludes channels extending across the at least one semiconductor deviceto permit flow of the coolant between the substrate and that at leastone semiconductor device.
 11. The semiconductor package as recited inclaim 1, wherein the impermeable housing is affixed to the substrateusing a liquid-tight adhesive.
 12. The semiconductor package as recitedin claim 1, wherein the impermeable housing is affixed to the substrateusing a mechanical fastener with a gasket on a rim of the impermeablehousing.
 13. A liquid cooled semiconductor package comprising: a firstsemiconductor device; a second semiconductor device soldered onto thefirst semiconductor device; an impermeable housing containing a liquidcoolant that fills an internal cavity, wherein the first semiconductordevice and the second semiconductor device are immersed in the coolant;and a convection structure extending inwardly from at least one interiorsurface of the impermeable housing, wherein the convection structureincludes a first wall and a second wall opposite the first wall andseparated by a distance, wherein the first wall and the second wall eachhave one or more holes for directing convective currents of the coolantdisposed within the internal cavity of the impermeable housing such thatthe convective currents are directed from the first semiconductor deviceand second semiconductor device around the convection structure, acrossa top portion of the impermeable housing, and back towards the firstsemiconductor device and the second semiconductor device, wherein thefirst semiconductor device and the second semiconductor device aredisposed outside the convection structure.
 14. The semiconductor packageas recited in claim 13, wherein the convection structure includes acentrally located top hole in the first wall and laterally spaced bottomholes in the second wall, wherein the centrally located top hole isdisposed between the laterally spaced bottom holes with respect to ahorizontal axis.
 15. The semiconductor package as recited in claim 14,wherein the convection structure is integrally formed within theimpermeable housing.
 16. The semiconductor package as recited in claim14, further including a heat sink disposed on at least one exteriorsurface of the impermeable housing.
 17. The semiconductor package asrecited in claim 14, wherein an underfill in a gap between the firstsemiconductor device and the substrate includes channels extendingacross the first semiconductor device to permit flow of the coolantbetween the substrate and the first semiconductor device.
 18. A methodfor forming a semiconductor package, the method comprising: filling aninternal cavity of an impermeable housing with a liquid coolant, whereinthe impermeable housing includes a convection structure extendinginwardly from at least one interior surface of the impermeable housing,wherein the convection structure includes a first wall and a second wallopposite the first wall and separated by a distance, and wherein thefirst wall and the second wall each have one or more holes configured todirect a flow of the liquid coolant; and affixing a substrate with asemiconductor device mounted on the substrate to the impermeablehousing, wherein the impermeable housing is around the semiconductordevice and the semiconductor device is disposed outside the convectionstructure.
 19. The method of claim 18, wherein the internal cavity ofthe impermeable housing is filled with the liquid coolant after affixingthe substrate to the impermeable housing.